SPD50N03S2-07
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number SPD50N03S2-07. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C, with a maximum power dissipation of 136W (Tc). Optimized for high-efficiency switching applications, it offers a low on-resistance (Rds On) of 7.3mOhm at 50A and 10V gate-source voltage. The gate charge (Qg) is 46.5 nC at 10V, and input capacitance (Ciss) is 2170 pF at 25V. Operating over a junction temperature range of -55°C to 175°C, this component is housed in a PG-TO252-3-11 (TO-252-3, DPAK) surface-mount package supplied on tape and reel. Applications include power management, industrial automation, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2170 pF @ 25 V |
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