SPD35N10
MOSFET N-CH 100V 35A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPD35N10 is an N-Channel power MOSFET designed for demanding power management applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) capability of 35A at 25°C (Tc). The low on-resistance, specified as 44mOhm maximum at 26.4A and 10V gate drive, minimizes conduction losses. With a maximum power dissipation of 150W (Tc), the SPD35N10 is suitable for high-power switching and linear applications. The device is housed in a PG-TO252-3 (DPAK) surface-mount package and operates across an extended temperature range of -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 65 nC maximum at 10V and input capacitance (Ciss) of 1570 pF maximum at 25V. This MOSFET is commonly utilized in automotive, industrial, and renewable energy systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 44mOhm @ 26.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 25 V |
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