SPD30P06P
MOSFET P-CH 60V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SIPMOS® SPD30P06P is a P-channel MOSFET designed for high-current switching applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C, with a maximum power dissipation of 125 W (Tc). The on-resistance (Rds On) is specified at a maximum of 75 mOhm at 21.5 A and 10 V gate-source voltage.
The SPD30P06P utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK surface mount package, supplied on tape and reel. Its gate charge (Qg) is 48 nC at 10 V, and input capacitance (Ciss) is 1535 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 21.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1535 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
