SPD30N08S2L-21
MOSFET N-CH 75V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number SPD30N08S2L-21. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 30A at 25°C (Tc). The SPD30N08S2L-21 offers a low on-resistance (Rds On) of 20.5mOhm maximum at 25A and 10V Vgs. Key parameters include a gate charge (Qg) of 72 nC maximum at 10V Vgs and input capacitance (Ciss) of 2130 pF maximum at 25V Vds. The MOSFET is designed for surface mounting in a TO-252-3, DPAK package. Maximum power dissipation is 136W (Tc) with an operating junction temperature range of -55°C to 175°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 25 V |
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