SPD30N08S2-22
MOSFET N-CH 75V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the OptiMOS™ SPD30N08S2-22, an N-Channel power MOSFET engineered for demanding applications. This component features a 75V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The low on-resistance of 21.5mOhm at 25A and 10V drive voltage, coupled with a gate charge of 57 nC at 10V, ensures efficient switching performance. The SPD30N08S2-22 utilizes MOSFET technology and is housed in a surface-mount PG-TO252-3-11 package, commonly known as TO-252-3 or DPAK. This device is suitable for use in automotive and industrial power management systems, leveraging its robust design for reliable operation across a temperature range of -55°C to 175°C (TJ). It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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