SPD30N06S2L-23
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD30N06S2L-23 is a 55V N-Channel Power MOSFET from the OptiMOS™ series. This component features a low Rds(on) of 23mOhm at 22A and 10V Vgs, with a continuous drain current capability of 30A at 25°C. Designed for surface mount applications, it is housed in a TO-252-3 (DPAK) package. Key electrical parameters include a gate charge of 42 nC at 10V and input capacitance of 1390 pF at 25V. The device supports a gate-source voltage range of ±20V and has a threshold voltage of 2V at 50µA. With a maximum power dissipation of 100W (Tc) and an operating junction temperature range of -55°C to 175°C, this MOSFET is suitable for demanding applications in areas such as automotive, industrial power supplies, and motor control. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1390 pF @ 25 V |
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