SPD30N06S2L-13
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ MOSFET N-Channel SPD30N06S2L-13 is a 55V device designed for efficient power switching applications. This surface mount component, packaged in a TO-252-3 (DPAK) configuration, offers a continuous drain current of 30A (Tc) and a maximum power dissipation of 136W (Tc). Key electrical characteristics include a low on-resistance of 13mOhm at 30A and 10V Vgs, with a gate charge (Qg) of 69 nC at 10V. Input capacitance (Ciss) is rated at 2300 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V. This MOSFET is utilized in industries such as automotive, industrial automation, and consumer electronics for power management solutions.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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