SPD30N06S2-23
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPD30N06S2-23 is a 55V N-Channel power MOSFET designed for efficient switching applications. This device features a low Rds(on) of 23mOhm at 21A and 10V Vgs, ensuring minimal conduction losses. With a continuous drain current capability of 30A (Tc), it is suitable for demanding power management tasks. The SPD30N06S2-23 utilizes a TO-252-3 (DPAK) surface mount package for compact board layouts. Key electrical parameters include a gate charge (Qg) of 32 nC at 10V and input capacitance (Ciss) of 1250 pF at 25V. This component is widely utilized in automotive, industrial motor control, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 25 V |
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