SPD30N06S2-15
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD30N06S2-15 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 30 A at 25°C. The Rds(on) is specified at a maximum of 14.7 mOhm at 30 A and 10 V gate drive. With a maximum power dissipation of 136 W (Tc), this MOSFET is suitable for demanding applications. Key parameters include a gate charge (Qg) of 52 nC at 10 V and input capacitance (Ciss) of 2070 pF at 25 V. The device is housed in a PG-TO252-3-11 (TO-252-3, DPAK) package, designed for surface mounting. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power management, industrial automation, and automotive systems. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 25 V |
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