SPD30N03S2L10GBTMA1
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPD30N03S2L10GBTMA1 is an N-Channel Power MOSFET with a 30V drain-source voltage and a continuous drain current of 30A at 25°C (Tc). This device features a low on-resistance of 10mOhm at 30A and 10V, and a maximum power dissipation of 100W (Tc). The gate charge (Qg) is 41.8 nC at 10V, and the input capacitance (Ciss) is 1550 pF at 25V. It operates over an extended temperature range of -55°C to 175°C (TJ). The SPD30N03S2L10GBTMA1 is supplied in a PG-TO252-3 package, suitable for surface mounting, and is delivered on tape and reel. This component is utilized in applications such as automotive power management and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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