SPD30N03S2L07GBTMA1
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number SPD30N03S2L07GBTMA1, offers a 30V drain-source voltage and 30A continuous drain current at 25°C (Tc). This surface mount device features a low Rds(on) of 6.7mOhm maximum at 30A and 10V Vgs, facilitated by a 4.5V to 10V drive voltage range. Key electrical parameters include a maximum gate charge (Qg) of 68 nC at 10V and an input capacitance (Ciss) of 2530 pF maximum at 25V. The component operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 136W (Tc). Encased in a PG-TO252-3 (DPAK) package, it is supplied on tape and reel. This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530 pF @ 25 V |
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