SPD26N06S2L-35
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD26N06S2L-35 is an N-Channel Power MOSFET from the OptiMOS™ series. This surface-mount device, packaged in a TO-252-3 (DPAK) case, offers a drain-source voltage (Vdss) of 55V. It features a continuous drain current (Id) capability of 30A at 25°C (Tc) and a maximum power dissipation of 68W (Tc). The Rds(On) is specified at a maximum of 35mOhm when driven at 13A with a 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 24 nC (Max) at 10V and input capacitance (Ciss) of 790 pF (Max) at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 26µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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