SPD15N06S2L-64
MOSFET N-CH 55V 19A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD15N06S2L-64, an N-Channel Power MOSFET from the OptiMOS™ series, features a 55V drain-source voltage and a continuous drain current of 19A at 25°C. This device offers a maximum on-resistance of 64mOhm at 8A and 10V Vgs, with a gate charge of 13 nC at 10V. The input capacitance (Ciss) is rated at 445 pF maximum at 25V. Designed for surface mounting in a TO-252-3, DPAK (SC-63) package, this component is specified for a maximum power dissipation of 47W. It operates across an extended temperature range of -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 445 pF @ 25 V |
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