SPD14N06S2-80
MOSFET N-CH 55V 17A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD14N06S2-80 is an N-Channel Power MOSFET from the OptiMOS™ series, designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 17A at 25°C. The Rds(on) is specified at a maximum of 80mOhm at 7A and 10V gate drive. With a maximum power dissipation of 30W (Tc), it is housed in a PG-TO252-3-11 package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 10 nC @ 10V and input capacitance (Ciss) of 400 pF @ 25V. The operating temperature range is -55°C to 175°C. This device is commonly utilized in industrial power supplies, automotive electronics, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 14µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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