SPD11N10
MOSFET N-CH 100V 10.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD11N10 is an N-Channel SIPMOS® MOSFET designed for demanding applications. This component offers a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10.5A at 25°C, with a maximum power dissipation of 50W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 170mOhm at 7.8A and 10V, and a gate charge (Qg) of 18.3 nC at 10V. The input capacitance (Ciss) is rated at 400 pF at 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), the SPD11N10 is housed in a PG-TO252-3-11 (TO-252-3, DPAK) surface-mount package. This device is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 21µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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