SPD100N03S2L-04
MOSFET N-CH 30V 100A TO252-5Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ SPD100N03S2L-04 is a 30V N-channel power MOSFET designed for high-efficiency power switching applications. This component features a low Rds(on) of 4.2mOhm at 50A and 10V Vgs, facilitating reduced conduction losses. With a continuous drain current capability of 100A (Tc) and a maximum power dissipation of 150W (Tc), it is suitable for demanding power conversion circuits. The device utilizes a PG-TO252-5-1 package, enabling surface mount assembly. Key electrical characteristics include a gate charge (Qg) of 89.7 nC at 10V and input capacitance (Ciss) of 3320 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). Applications include automotive power systems, industrial power supplies, and battery management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-5, DPAK (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-TO252-5-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 89.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 25 V |
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