SPD09P06PL
MOSFET P-CH 60V 9.7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPD09P06PL is a P-Channel MOSFET from the SIPMOS® series. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 9.7A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 250mOhm at 6.8A and 10V Vgs. Its power dissipation capability is rated at 42W (Tc). The SPD09P06PL is housed in a PG-TO252-3 (TO-252-3, DPAK) surface mount package. Key electrical parameters include a gate charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 450pF at 25V. This MOSFET is suitable for applications in automotive and industrial sectors. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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