SPD08P06P
MOSFET P-CH 60V 8.83A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SIPMOS® SPD08P06P is a P-Channel Power MOSFET designed for demanding applications. This surface mount device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 8.83A at 25°C (Ta), with a maximum power dissipation of 42W (Tc). The Rds On is rated at a maximum of 300mOhm at 6.2A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 13 nC (Max) at 10V and Input Capacitance (Ciss) of 420 pF (Max) at 25V Vds. The device utilizes Metal Oxide technology and is provided in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. This component is suitable for automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.83A (Ta) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 6.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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