SPD08N50C3BTMA1
MOSFET N-CH 560V 7.6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD08N50C3BTMA1 is an N-channel power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 560 V and a continuous drain current (Id) of 7.6 A at 25°C (Tc), with a maximum power dissipation of 83 W (Tc). The on-resistance (Rds On) is specified at 600 mOhm maximum at 4.6 A and 10 V gate-source voltage.
The SPD08N50C3BTMA1 utilizes a surface mount package, specifically the PG-TO252-3-11 (TO-252-3, DPAK), ideal for automated assembly processes. Key parameters include a gate charge (Qg) of 32 nC maximum at 10 V and input capacitance (Ciss) of 750 pF maximum at 25 V. The operating temperature range is from -55°C to 150°C (TJ). This component is suitable for use in power supplies and industrial applications requiring efficient switching at high voltages. The device is supplied on a tape and reel for high-volume production.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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