SPD07N60S5
MOSFET N-CH 600V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPD07N60S5, is engineered for high-efficiency power conversion applications. This device offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 7.3 A at 25°C, with a maximum power dissipation of 83 W. Key parameters include a low on-resistance (Rds On) of 600 mOhm at 4.6 A and 10 V, and a gate charge (Qg) of 35 nC at 10 V. The input capacitance (Ciss) is 970 pF maximum at 25 V. The SPD07N60S5 is housed in a PG-TO252-3-11 (TO-252-3, DPAK) surface-mount package, supplied on tape and reel (TR). This component is suitable for use in the power supply and industrial sectors.
Additional Information
Series: CoolMOS™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 350µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 25 V |