SPD07N60C3
MOSFET N-CH 600V 7.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD07N60C3 is a 600V N-Channel Power MOSFET designed for high-efficiency applications. This device features a continuous drain current of 7.3A (Tc) and a maximum power dissipation of 83W (Tc). The Rds(on) is rated at 600mOhm at 4.6A and 10V, with a gate charge (Qg) of 27 nC at 10V. The input capacitance (Ciss) is 790 pF at 25V. The SPD07N60C3 is housed in a PG-TO252-3 (DPAK) surface mount package, offering excellent thermal performance and suitability for automated assembly. Operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power factor correction, switch-mode power supplies, and general-purpose high-voltage switching applications across the industrial and consumer electronics sectors.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 350µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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