SPD07N20GBTMA1
MOSFET N-CH 200V 7A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies SPD07N20GBTMA1 is an N-Channel SIPMOS® MOSFET designed for robust power switching applications. This device features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 7 A at 25°C. With a maximum power dissipation of 40 W (Tc), it is suitable for demanding thermal environments. The on-resistance (Rds On) is specified at a maximum of 400 mOhm at 4.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 31.5 nC at 10 V and an input capacitance (Ciss) of 530 pF at 25 V. The SPD07N20GBTMA1 is available in a surface mount PG-TO252-3 package, supplied on tape and reel. This component finds utility in various industries including industrial automation, automotive power management, and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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