SPD06N80C3BTMA1
MOSFET N-CH 800V 6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD06N80C3BTMA1 is an N-Channel power MOSFET designed for high-voltage applications. This device features an 800V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Ta). With a maximum power dissipation of 83W (Tc), its Rds(on) is specified at 900mOhm at 3.8A and 10V gate drive. The SPD06N80C3BTMA1 utilizes a surface mount PG-TO252-3-11 package (also known as TO-252-3, DPAK) and is supplied on a Tape & Reel (TR). Key parameters include a gate charge (Qg) of 41 nC (max) at 10V and an input capacitance (Ciss) of 785 pF (max) at 100V. This component is suitable for use in power supply, lighting, and renewable energy systems.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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