SPD06N80C3ATMA1
MOSFET N-CH 800V 6A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD06N80C3ATMA1 is an N-Channel CoolMOS™ Power MOSFET. This device offers an 800V drain-source voltage and a continuous drain current of 6A at 25°C. Designed for surface mounting in the PG-TO252-3 package, it features a maximum power dissipation of 83W at 25°C case temperature. The Rds On is specified at 900mOhm maximum at 3.8A and 10V gate-source voltage. Key electrical characteristics include a gate charge of 41nC at 10V and an input capacitance of 785pF at 100V. This component is suitable for applications in power supplies, lighting, and industrial power conversion. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 100 V |
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