SPD06N60C3BTMA1
MOSFET N-CH 650V 6.2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPD06N60C3BTMA1, is a 650V device with a continuous drain current of 6.2A (Tc) and a maximum power dissipation of 74W (Tc). This surface mount component, housed in a TO-252-3 (DPAK) package, features an Rds On of 750mOhm at 3.9A and 10V. Key parameters include a Ciss of 620pF at 25V and a Qg of 31nC. Designed for demanding applications, this MOSFET operates across a temperature range of -55°C to 150°C and is supplied on tape and reel. Its robust specifications make it suitable for use in power supply units and high-voltage switching applications across various industrial sectors.
Additional Information
Series: CoolMOS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 260µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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