SPD04P10PGBTMA1
MOSFET P-CH 100V 4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies SPD04P10PGBTMA1 is a P-Channel SIPMOS® MOSFET designed for demanding applications. This surface mount component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 4 A at 25°C (Tc). With a maximum power dissipation of 38 W (Tc), it offers robust performance. The Rds On is specified at 1 Ohm maximum for an Id of 2.8 A and Vgs of 10 V. Key parameters include a gate charge (Qg) of 12 nC maximum at 10 V and input capacitance (Ciss) of 319 pF maximum at 25 V and 25 V. The device operates within an ambient temperature range of -55°C to 175°C (TJ). The PG-TO252-3 package is supplied on tape and reel. This component is commonly utilized in power management circuits, automotive systems, and industrial automation.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 380µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
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