SPD04N80C3BTMA1
MOSFET N-CH 800V 4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies’ CoolMOS™ SPD04N80C3BTMA1 is an N-channel power MOSFET featuring an 800V drain-source breakdown voltage. This component offers a continuous drain current of 4A at 25°C (Tc) and a maximum power dissipation of 63W (Tc). The device exhibits a low on-resistance of 1.3 Ohm (max) at 2.5A and 10V Vgs. With a gate charge of 26 nC (max) at 10V Vgs and an input capacitance of 570 pF (max) at 25V Vds, it is designed for efficient switching. The SPD04N80C3BTMA1 is housed in a PG-TO252-3-11 (TO-252-3, DPAK) surface-mount package and operates across an industrial temperature range of -55°C to 150°C (TJ). This component is frequently utilized in power supply units, lighting, and industrial power applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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