SPD04N60C3BTMA1
MOSFET N-CH 650V 4.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD04N60C3BTMA1 is a 650V N-channel CoolMOS™ Power MOSFET. This surface mount device, packaged in a PG-TO252-3-11 (TO-252-3, DPAK) with Tape & Reel (TR) packaging, offers a continuous drain current of 4.5A (Tc) and a maximum power dissipation of 50W (Tc). Key electrical parameters include a drain-to-source voltage (Vdss) of 650V, a maximum on-resistance (Rds On) of 950mOhm at 2.8A and 10V, and a gate charge (Qg) of 25nC at 10V. Input capacitance (Ciss) is 490pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±20V. This component is suitable for applications in power supplies, lighting, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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