SPD04N60C3ATMA1
MOSFET N-CH 600V 4.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD04N60C3ATMA1 is a 600 V N-Channel power MOSFET in a PG-TO252-3 (DPAK) surface mount package. This device offers a continuous drain current of 4.5 A (Tc) and a maximum power dissipation of 50 W (Tc). Key electrical characteristics include a typical Rds(on) of 950 mOhm at 2.8 A and 10 V, with a Vgs(th) maximum of 3.9 V at 200 µA. The input capacitance (Ciss) is rated at 490 pF (max) at 25 V, and gate charge (Qg) is 25 nC (max) at 10 V. This component is suitable for applications in power supplies, lighting, and motor control. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 490 pF @ 25 V |
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