SPD04N50C3BTMA1
MOSFET N-CH 560V 4.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD04N50C3BTMA1 is a 560V N-Channel Power MOSFET in a PG-TO252-3-11 (TO-252) surface mount package. This device offers a continuous drain current (Id) of 4.5A at 25°C with a maximum power dissipation of 50W. Key parameters include a Vgs(th) of 3.9V, a low on-resistance (Rds On) of 950mOhm at 2.8A and 10V, and an input capacitance (Ciss) of 470pF at 25V. The SPD04N50C3BTMA1 is suitable for applications in power factor correction, switch mode power supplies, and general purpose power switching. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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