SPD04N50C3ATMA1
MOSFET N-CH 500V 4.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD04N50C3ATMA1 is a 500 V N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance of 950 mOhm at 2.8 A and 10 V Vgs, facilitating reduced conduction losses. With a continuous drain current capability of 4.5 A at 25°C (Tc) and a maximum power dissipation of 50 W (Tc), it is suitable for demanding thermal environments. The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in a PG-TO252-3 (DPAK) surface-mount package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 22 nC at 10 V and input capacitance (Ciss) of 470 pF at 25 V. This MOSFET is utilized in industries such as consumer electronics and industrial power supplies, where efficient switching is critical.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 470 pF @ 25 V |
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