SPD03N50C3ATMA1
MOSFET N-CH 500V 3.2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPD03N50C3ATMA1, offers a 500V drain-source voltage with a continuous drain current of 3.2A at 25°C (Tc). This device features a maximum on-resistance of 1.4 Ohm at 2A, 10V, and a gate charge of 15 nC at 10V. The SPD03N50C3ATMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package and supports a maximum power dissipation of 38W (Tc). Key electrical parameters include an input capacitance (Ciss) of 350 pF at 25V and a threshold voltage (Vgs(th)) of 3.9V at 135µA. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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