SPD02N80C3BTMA1
MOSFET N-CH 800V 2A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies CoolMOS™ SPD02N80C3BTMA1 is an N-channel power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum power dissipation of 42W (Tc) and a surface mount TO-252-3 (PG-TO252-3) package, it is suitable for efficient power conversion in industries such as industrial power supplies and renewable energy systems. Key electrical characteristics include a maximum on-resistance (Rds On) of 2.7 Ohms at 1.2A and 10V, and a gate charge (Qg) of 16 nC at 10V. The operating temperature range is -55°C to 150°C (TJ). This device is supplied in tape and reel packaging.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
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