SPD02N60S5BTMA1
MOSFET N-CH 600V 1.8A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ SPD02N60S5BTMA1 is an N-Channel power MOSFET featuring 600V drain-source breakdown voltage and 1.8A continuous drain current at 25°C (Tc). This surface mount device, housed in a TO-252-3 (DPAK) package, offers a maximum on-resistance of 3 Ohm at 1.1A and 10V Vgs. Key parameters include a 9.5 nC gate charge (Qg) and 240 pF input capacitance (Ciss). With a maximum power dissipation of 25W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this component is suitable for applications in power supplies, lighting, and renewable energy systems. The device is supplied in tape and reel packaging.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
Request a Quote
Clients Also Buy
SPB11N60C3ATMA1
MOSFET N-CH 650V 11A TO263-3
IPB95R310PFD7ATMA1
LOW POWER_NEW
SPP17N80C3XKSA1
MOSFET N-CH 800V 17A TO220-3
