SPD02N60C3BTMA1
MOSFET N-CH 650V 1.8A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPD02N60C3BTMA1 is a 650 V N-channel CoolMOS™ Power MOSFET in a PG-TO252-3-11 package. This device offers a continuous drain current of 1.8 A (Tc) and a maximum power dissipation of 25 W (Tc). Key electrical characteristics include a low Rds(on) of 3 Ohm at 1.1 A, 10 V and a gate charge (Qg) of 12.5 nC @ 10 V. Input capacitance (Ciss) is specified at 200 pF @ 25 V. The MOSFET features a Vgs(th) of 3.9 V @ 80 µA and a maximum Vgs of ±20V. Operating temperature range is from -55°C to 150°C. This component is commonly employed in power supply units, lighting, and industrial applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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