SPD02N50C3BTMA1
LOW POWER_LEGACYManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the SPD02N50C3BTMA1, an N-Channel CoolMOS™ power MOSFET. This device features a Vdss rating of 500 V and a continuous drain current (Id) of 1.8 A at 25°C (Tc). With a maximum power dissipation of 25 W (Tc), it is designed for efficient operation. The Rds On is specified at a maximum of 3 Ohms at 1.1 A and 10 V. Key parameters include a gate charge (Qg) of 9 nC (Max) at 10 V and input capacitance (Ciss) of 190 pF (Max) at 25 V. The SPD02N50C3BTMA1 utilizes a surface mountable PG-TO252-3-311 package, commonly known as TO-252-3, DPAK. This component is suitable for applications in power supply units, lighting, and industrial automation. It operates within an ambient temperature range of -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO252-3-311 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 25 V |