SPD02N50C3
MOSFET N-CH 560V 1.8A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number SPD02N50C3, is a 560V device designed for high-efficiency power conversion applications. This PG-TO252-3-11 packaged component offers a continuous drain current of 1.8A (Tc) and a maximum power dissipation of 25W (Tc). Key electrical characteristics include a drain-to-source voltage (Vdss) of 560V, a maximum on-resistance (Rds On) of 3 Ohm at 1.1A and 10V gate drive, and a gate charge (Qg) of 9 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 190 pF at 25V. The SPD02N50C3 is suitable for surface mounting and operates within a temperature range of -55°C to 150°C (TJ). This component finds application in power supplies, lighting, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 560 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 190 pF @ 25 V |
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