SPD01N60C3BTMA1
MOSFET N-CH 650V 800MA TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ SPD01N60C3BTMA1 is a 650V N-channel Power MOSFET in a PG-TO220-3 surface mount package. This device features a low on-resistance of 6 Ohms maximum at 500mA and 10V Vgs, with a continuous drain current of 800mA at 25°C. The maximum power dissipation is 11W at 25°C. Key parameters include a gate charge of 5 nC maximum at 10V Vgs and an input capacitance of 100 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power factor correction (PFC), switch mode power supplies (SMPS), and lighting. The device is supplied in tape and reel packaging.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 11W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
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