SPB80P06P
MOSFET P-CH 60V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPB80P06P is a P-Channel SIPMOS® MOSFET designed for demanding applications. This surface mount component offers a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C (Tc). The device features a maximum power dissipation of 340W (Tc) and a low on-resistance (Rds On) of 23mOhm at 64A and 10V gate drive. Key parameters include an input capacitance (Ciss) of 5033pF and a gate charge (Qg) of 173nC, both specified at typical operating conditions. The TO-263-3 (D2PAK) package is suitable for automated assembly processes. This component is utilized in power management, automotive systems, and industrial motor control applications.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 5.5mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
