SPB80N10L G
MOSFET N-CH 100V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SIPMOS® SPB80N10L-G is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 80A at 25°C (case temperature). The low on-resistance of 14mOhm at 58A and 10V (Vgs) ensures efficient power transfer. With a maximum power dissipation of 250W (Tc), it is suitable for high-power switching and motor control applications. The device utilizes a surface mount TO-263-3, D2PAK package for thermal management. Key parameters include Gate Charge (Qg) of 240 nC at 10V, Input Capacitance (Ciss) of 4540 pF at 25V, and a threshold voltage (Vgs(th)) of 2V at 2mA. Operating temperature ranges from -55°C to 175°C. This MOSFET is commonly employed in industrial automation, power supplies, and automotive systems.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
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