SPB80N10L
MOSFET N-CH 100V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPB80N10L is an N-Channel Power MOSFET from the SIPMOS® series, packaged in a PG-TO263-3-2 (TO-263-3, D2PAK) surface-mount configuration. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 80 A at 25°C (Tc), with a maximum power dissipation of 250 W (Tc). The on-resistance (Rds On) is specified at a maximum of 14 mOhm at 58 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 240 nC at 10 V and input capacitance (Ciss) of 4540 pF at 25 V. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V. This device is suitable for applications in industrial power supplies, automotive systems, and motor control.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 2mA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4540 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
