SPB80N08S2L-07
MOSFET N-CH 75V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N08S2L-07 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 75 V drain-source voltage (Vdss) and a continuous drain current capability of 80 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The low on-resistance (Rds On) of 6.8 mOhm is achieved at 67 A and 10 V Vgs. It operates with a gate-source voltage range of ±20 V and offers a threshold voltage (Vgs(th)) of 2 V at 250 µA. Key parameters include a maximum gate charge (Qg) of 233 nC at 10 V and input capacitance (Ciss) of 6820 pF at 25 V. The SPB80N08S2L-07 is housed in a TO-263-3 (D2PAK) surface-mount package, suitable for demanding thermal management. Its advanced technology makes it ideal for use in automotive, industrial power, and high-power switching applications. Packaged in Tape & Reel (TR).
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6820 pF @ 25 V |
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