SPB80N08S2-07
MOSFET N-CH 75V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N08S2-07 is a 75V N-Channel Power MOSFET designed for demanding applications. This device features a low Rds(on) of 7.1mOhm at 66A and 10V Vgs, enabling high efficiency in power conversion. With a continuous drain current capability of 80A (Tc) and a maximum power dissipation of 300W (Tc), it is suitable for high-power switching. The TO-263-3 package offers efficient thermal management for surface mount designs. Key electrical characteristics include a gate charge of 180 nC @ 10V and input capacitance of 6130 pF @ 25V. Operating temperature ranges from -55°C to 175°C. This MOSFET is widely utilized in automotive power systems, industrial motor control, and high-efficiency power supplies.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6130 pF @ 25 V |
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