SPB80N06S2L-H5
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N06S2L-H5 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a 55 V drain-source voltage and a continuous drain current capability of 80 A at 25°C, with a maximum power dissipation of 300 W. The low on-resistance of 5 mOhm at 80 A and 10 V gate-source voltage, coupled with a gate charge of 190 nC at 10 V, ensures efficient operation. The device supports a wide gate drive voltage range from 4.5 V to 10 V and has a maximum gate-source voltage of ±20 V. With a threshold voltage of 2 V at 230 µA, it offers robust switching characteristics. The SPB80N06S2L-H5 is housed in a PG-TO263-3-2 (TO-263AB) package for surface mounting and operates across an industrial temperature range of -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 230µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 25 V |
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