SPB80N06S2L-11
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N06S2L-11 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 158W (Tc). The low on-resistance (Rds On) of 11mOhm at 40A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 80 nC (max) at 10V Vgs and input capacitance (Ciss) of 2650 pF (max) at 25V Vds. The device operates over a temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO263-3-2 (TO-263AB) surface-mount package, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial power, and energy infrastructure sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 158W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 93µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 25 V |
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