SPB80N06S2L-05
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ SPB80N06S2L-05 is a high-performance N-channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc). The extremely low on-resistance (Rds On) of 4.5mOhm at 80A and 10V gate drive voltage, coupled with a maximum power dissipation of 300W (Tc), makes it suitable for demanding applications. Key parameters include a Gate Charge (Qg) of 230 nC at 10V Vgs and an Input Capacitance (Ciss) of 7530 pF at 25V Vds. The SPB80N06S2L-05 utilizes surface mount technology with a PG-TO263-3-2 package, also known as TO-263-3, D2PAK. This component is ideal for power management in automotive, industrial, and consumer electronics sectors. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum Gate-Source Voltage (Vgs) of ±20V.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7530 pF @ 25 V |
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