SPB80N06S2-09
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies SPB80N06S2-09 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 9.1 mOhm at 50 A and 10 V, with a maximum power dissipation of 190 W (Tc). It is housed in a PG-TO263-3-2 surface mount package, also known as TO-263AB or D2PAK. Key electrical characteristics include a Gate Charge (Qg) of 80 nC at 10 V and an input capacitance (Ciss) of 3140 pF at 25 V. This MOSFET is suitable for high-current switching applications in industries such as automotive, industrial power supplies, and motor control. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 125µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3140 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
