SPB80N06S2-08
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB80N06S2-08 is an N-Channel Power MOSFET from the OptiMOS™ series, designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 215W at the same temperature. The low on-resistance (Rds On) of 8mOhm at 58A and 10V gate drive ensures high efficiency. Key parameters include a gate charge (Qg) of 96 nC at 10V and input capacitance (Ciss) of 3800 pF at 25V. Packaged in a TO-263-3 (D2PAK) surface mount configuration, it operates across a wide temperature range of -55°C to 175°C. This component finds utility in power management solutions across various industrial sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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