SPB80N06S2-05
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies SPB80N06S2-05 is an N-Channel Power MOSFET from the OptiMOS™ series, designed for demanding applications. This component features a drain-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 300 W (Tc). The ultra-low on-resistance (Rds On) is specified at 4.8 mOhm at 80 A and 10 V gate drive. Key electrical characteristics include a gate charge (Qg) of 170 nC (max) at 10 V and an input capacitance (Ciss) of 6790 pF (max) at 25 V.
The SPB80N06S2-05 utilizes advanced MOSFET technology and is housed in a PG-TO263-3-2 (TO-263-3, D2PAK) surface-mount package, supplied in tape and reel. Its robust construction and high performance make it suitable for use in power supply units, automotive systems, and industrial motor control applications. The operating temperature range is -55°C to 175°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6790 pF @ 25 V |
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