SPB80N06S08ATMA1
MOSFET N-CH 55V 80A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' SPB80N06S08ATMA1 is an N-Channel Power MOSFET from the SIPMOS® series. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(On) is specified at a maximum of 7.7mOhm at 80A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 187 nC (Max) at 10V and an input capacitance (Ciss) of 3660 pF (Max) at 25V. The device is housed in a PG-TO263-3-2 surface mount package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 187 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 25 V |
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